TMS4116-25NL, 16Kbit (16K x 1) NMOS Dynamic RAM, DIP-16

16Kbit NMOS DRAM: Organized as 16K x 1-bit, providing reliable and efficient memory storage.
250ns Access Time: Ensures stable performance for computing and industrial applications.
Multiplexed Addressing: Utilizes row and column address multiplexing to reduce pin count and simplify design.
Single 5V Power Supply: Operates at +5V, ensuring compatibility with standard logic circuits.
Refresh Support: Requires periodic refresh cycles for data retention, supporting 128 refresh cycles every 2ms.
DIP-16 Package: Standard 16-pin Dual In-Line Package for easy integration into through-hole PCB designs.

Category: ICs

The TMS4116-25NL is a 16Kbit (16K x 1-bit) NMOS Dynamic Random-Access Memory (DRAM) developed by Texas Instruments. This memory chip is ideal for computing, telecommunications, and industrial control applications that require high-speed, volatile memory.

With a 250ns access time, the TMS4116-25NL provides reliable and efficient performance. Its multiplexed row and column addressing reduces the required number of pins, simplifying PCB designs and enabling compact system configurations.

The DRAM operates on a single +5V power supply, ensuring compatibility with TTL logic systems. It supports 128 refresh cycles every 2ms to retain data during operation, making it suitable for applications that require stable, continuous memory performance.

The DIP-16 package ensures easy integration into traditional through-hole systems, making it a preferred choice for legacy computing, embedded designs, and industrial automation.