ICs
IRFD110,N-Channel MOSFET,100V,0.54Ohms
- Compact HEXDIP package for easy insertion and board stacking.
- N-Channel MOSFET with 100V drain-to-source breakdown voltage.
- Low Rds(on) of 0.54 Ohms at Vgs = 10V.
- Continuous drain current capability of 0.71A at 25C.
- Maximum junction temperature rating of 175C for reliability.
- Ideal for high-speed switching with low gate charge (2.3nC typical).
