HY62256A-DIP

The HY62256A-DIP is a high-speed, low-power CMOS Static Random Access Memory (SRAM) with a storage capacity of 32K x 8 bits. Manufactured using Hyundai’s advanced CMOS technology, this SRAM provides robust performance for various applications, including microprocessor systems, battery-backed devices, and data storage solutions.

It features full static operation, tri-state outputs, and TTL-compatible inputs and outputs, requiring no clocking or refreshing. With a data retention capability at a minimum supply voltage of 2.0V, the HY62256A-DIP is an excellent choice for systems needing reliable and low-power memory.Key Features:

• High-Speed Access: Fast read/write access times of 55, 70, or 85 nanoseconds.
• Low Power Consumption: Minimal standby current of 1mA (max) at 5V, making it suitable for battery-powered applications.
• Wide Operating Voltage Range: Operates from 2.0V to 5.5V for diverse usage.
• Fully Static Operation: No need for external clock signals or refreshing cycles.
• Data Retention Capability: Maintains data integrity at a minimum voltage of 2.0V.
• Standard 28-Pin DIP Package: Ideal for through-hole mounting in various circuit designs.