ICs
HIP0061
- Integrated N-Channel MOSFETs: Contains three matched N-Channel enhancement mode MOS transistors in a common source configuration.
- High Output Voltage: Supports output voltages up to 60V, suitable for various high-voltage applications.
- Significant Current Handling: Each transistor can handle continuous currents up to 3.5A, with a pulsed current capacity of 10A.
- Low On-Resistance: Features a maximum RDS(on) of 0.225Ω per transistor at VGS = 10V, minimizing conduction losses.
- Robust Design: Each transistor is 100% avalanche tested with an energy rating of 100mJ, ensuring ruggedness and reliability.
- ESD Protection: Incorporates ESD protection, enhancing device durability in sensitive applications.
