ICs
FQD2N80, N-Channel MOSFET, TO-252 Package
- High Voltage Capability: Withstands a drain-source voltage (VDS) of up to 800V, suitable for high-voltage applications.
- Moderate Current Handling: Supports a continuous drain current (ID) of 1.8A at 25°C, accommodating moderate power loads.
- Low On-Resistance: Features a maximum RDS(on) of 6.3Ω at VGS = 10V, reducing conduction losses.
- Fast Switching Performance: Designed for rapid switching operations, enhancing efficiency in high-frequency applications.
- Low Gate Charge: Exhibits a typical gate charge of 12nC, facilitating efficient driving.
- TO-252 Package: Provides efficient heat dissipation and ease of mounting.
