ICs
IRF7316-SMD
- Dual P-Channel MOSFET Design – Combines two transistors in a single SO-8 package for compact and efficient designs.
- Low On-Resistance (R_DS(on)) – 0.058Ω for reduced conduction losses.
- High Power Handling – Rated at -30V V_DS and offers a continuous drain current up to -3.9A at 25°C.
- Enhanced Switching Performance – With a total gate charge of 8.3 nC, ideal for fast switching applications.
- Wide Operating Temperature Range – Junction temperature range from -55°C to +150°C, suitable for harsh environments.
- Thermal Efficiency – With R_thJA of 62.5°C/W, suitable for designs requiring thermal management.
