ICs
TMS4256-10NL
- 256Kbit NMOS DRAM: Organized as 256K x 1-bit, providing reliable volatile memory storage.
- 100ns Access Time: Ensures high-speed read/write performance, suitable for computing and industrial applications.
- Multiplexed Addressing: Uses row and column address multiplexing to reduce pin count and simplify system design.
- Single 5V Power Supply: Operates at +5V, ensuring compatibility with TTL and NMOS logic systems.
- Refresh Support: Requires 256-cycle refresh every 4ms to maintain data integrity.
- DIP-16 Package: Standard 16-pin Dual In-Line Package for easy integration into legacy and embedded systems.
