D2118-3, 16Kbit (16K x 1) NMOS Page Mode DRAM, DIP-16

16Kbit Page Mode DRAM: Organized as 16K x 1-bit, providing efficient volatile memory storage.
100ns Access Time: Ensures high-speed performance for legacy systems and industrial applications.
Dynamic Refresh Requirement: Supports 128 refresh cycles per 2ms for data retention.
Single 5V Power Supply: Operates at +5V, making it compatible with standard TTL logic levels.
Compact Ceramic DIP-16 Package: Durable 16-pin Ceramic Dual In-Line Package (CDIP) for easy integration into through-hole designs.
Legacy Design: Ideal for vintage computing systems and embedded applications requiring reliable dynamic memory.

Category: ICs

The D2118-3 is a 16Kbit (16K x 1-bit) NMOS Dynamic Random-Access Memory (DRAM) developed by Intel. This high-speed memory chip is designed for applications requiring efficient volatile storage with rapid data access. Its 100ns access time makes it suitable for legacy computing, embedded systems, and industrial controllers.

Utilizing page mode operation, the D2118-3 optimizes memory access within a page, enhancing data throughput for systems with high-speed requirements. The dynamic refresh design maintains data integrity with 128 refresh cycles per 2ms, ensuring stable operation.

Encased in a 16-pin Ceramic Dual In-Line Package (CDIP), this DRAM provides durability and ease of integration into traditional through-hole designs. Operating at a single 5V power supply, it is fully compatible with TTL-based logic families.

The D2118-3 is a reliable memory solution for vintage systems, memory expansion projects, and embedded controllers, where compatibility and stability are essential.